Methods of forming material layer
US10468256B2 · kind B2 · utility
0Cited by
13References
18Claims
0Family size
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Key dates
| Filing date | Apr 7, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.