Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through Fowler-Nordheim tunneling

US10468425B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Luca Milani · Rossano Veneto, IT
• Fabrizio Torricelli · Brescia, IT
• Anna Richelli · Brescia, IT
• Luigi Colalongo · Cesena, IT
• Zsolt Miklos Kovàcs-Vajna · Concesio, IT

Key dates

• Filing date: Jan 26, 2015
• Grant date: Nov 5, 2019
• Expiry date: Aug 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/681

Abstract

A non-volatile memory includes cells arranged in rows and columns. Each memory cell includes an access portion and a control portion. The access and control portions share an electrically floating layer of conductive material defining a first capacitive coupling with the access portion and a second capacitive coupling with the control portion. The first capacitive coupling defines a first capacity lower than a second capacity defined by the second capacitive coupling. The control portion is configured so that an electric current extracts charge carriers from the electrically floating layer through Fowler-Nordheim tunneling to store a first logic value in the memory cell. The access portion is configured so that an electric current injects charge carriers in the electrically floating layer by injection of band-to-band tunneling-induced hot electrons to store a second logic value, respectively, in the memory cell.