Hybrid thin film transistor structure, display device, and method of making the same
US10468434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Feb 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.