Image sensors
US10468460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jan 2, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.