Heterojunction bipolar transistor and method of manufacturing the same
US10468508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2019 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jan 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.