Bidirectional silicon-controlled rectifier

US10468513B1 · kind B1 · utility

Assignee

• AMAZING MICROELECTRONIC CORP. · TW

Inventors

• Chih-Wei Chen · Tainan, TW
• Kun-Hsien Lin · Danei, TW

Key dates

• Filing date: Aug 30, 2018
• Grant date: Nov 5, 2019
• Expiry date: Aug 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/10

Abstract

A bidirectional silicon-controlled rectifier includes a lightly-doped semiconductor structure, a first lightly-doped region, a second lightly-doped region, a first doped well, a second doped well, a first heavily-doped area, a second heavily-doped area, a third heavily-doped area, a fourth heavily-doped area. The lightly-doped semiconductor structure, the first heavily-doped area, and the third heavily-doped area have a first conductivity type. The first lightly-doped region, the second lightly-doped region, the first doped well, the second doped well, the fourth heavily-doped area, and the second heavily-doped area have a second conductivity type. A first part of the first lightly-doped region is arranged under the first doped well. A second part of the second lightly-doped region is arranged under the second doped well.