Semiconductor device
US10468522B2 · kind B2 · utility
4Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2017 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jul 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rsp by minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal results. Moreover, a high frequency application achieves useful results by reducing a gate charge Qg for an identical device pitch to that of an alternative technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.