Microstructure enhanced absorption photosensitive devices
US10468543B2 · kind B2 · utility
6Cited by
51References
44Claims
0Family size
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Key dates
| Filing date | Mar 8, 2019 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Mar 8, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.