Oxide heterojunction for detection of infrared radiation
US10468548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 29, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A detector that includes an all-oxide, Schottky-type heterojunction. The “metal” side of the heterojunction is formed, for example, from a dysprosium (“Dy”) doped cadmium oxide (“CdO”) (i.e., CdO:Dy). The semiconductor side of the heterojunction is formed, for example, from cadmium magnesium oxide (“CdMgO”). On the metal side of the junction, “hot” electrons are created through the excitation of surface plasmon polaritons by infrared radiation. The hot electrons are able to cross the Schottky-type barrier of the heterojunction into the conduction band of the semiconductor where they can be detected. The working wavelength of infrared radiation that is being detected can be adjusted or tuned by modifying the Dy content of Dy-doped CdO. The height of the Schottky-type barrier can also be adjusted by modifying the composition of CdMgO, which allows for the optimization of the Schottky-type barrier height for a given working wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.