Method of manufacturing organic semiconductor film
US10468597B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 21, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jul 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 μm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.