Lateral P-N junction black phosphorus thin film, and method of manufacturing the same
US10468604B2 · kind B2 · utility
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Key dates
| Filing date | Dec 28, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Dec 28, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.