Elastic wave device, high-frequency front-end circuit, and communication device
US10469052B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Apr 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/72
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.