Patent · US Active

Multi-level gate control for transistor devices

US10469065B2 · kind B2 · utility

3Cited by

1References

26Claims

0Family size

Assignee

Dialog Semiconductor (UK) Limited · GB

Inventors

Horst Knoedgen · Munich, DE
Christoph Nagl · Graz, AT
Nebojsa Jelaca · Graz, AT
Frank Kronmueller · Neudenau, DE
Ambreesh Bhattad · Swindon, GB

Key dates

Filing date	Mar 1, 2018
Grant date	Nov 5, 2019
Priority date	—
Expiry date	Mar 1, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/47
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A circuit for operating a transistor device that acts as a switch is presented. The circuit includes the transistor device and a control circuit coupled to a gate of the transistor device. The control circuit is adapted to selectively apply at least a first voltage level, a second voltage level, and a third voltage level to the gate of the transistor device, wherein the first, second, and third voltage levels are distinct voltage levels. The disclosure further relates to a method of operating a transistor device that acts as a switch. The proposed circuit provides additional gate voltages, by contrast to conventional two-level gate drivers. By appropriate choice of the additional gate voltages, reverse mode conductance losses of the transistor device can be reduced and/or to the Safe Operating Area (SOA) of the transistor device can be improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.