Process for fabricating a micromechanical structure made of silicon carbide including at least one cavity
US10472230B2 · kind B2 · utility
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Key dates
| Filing date | Apr 6, 2017 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Apr 6, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0116
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.