Integrated circuits with magnetic tunnel junctions and methods of producing the same
US10475495B2 · kind B2 · utility
0Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Feb 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion layer positioned between the first and second free layers. The insertion layer is non-magnetic, and the insertion layer includes terbium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.