Oxynitride thin film and capacitance element
US10475586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Mar 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/306
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property.A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.