Patent · US Active

Electrostatic chuck device, and semiconductor manufacturing device

US10475688B2 · kind B2 · utility

0Cited by
0References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2016
Grant dateNov 12, 2019
Priority date
Expiry dateOct 20, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68757
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An electrostatic chuck part of an electrostatic chuck device has an electrostatic chuck part inner peripheral surface surrounding an opening of a chuck part through-hole, and an electrostatic chuck part outer peripheral surface surrounding the electrostatic chuck part inner peripheral surface. An insulator has an insulator main body in which an insulator through-hole having an opening on the electrostatic chuck part side is formed, an insulator inner end face, and an insulator outer end face which faces the electrostatic chuck part outer peripheral surface. The insulator inner end face and the electrostatic chuck part inner peripheral surface are in contact with each other, or an adhesion layer or a plasma-resistant adhesive layer extends in a gap between the insulator inner end face and the electrostatic chuck part inner peripheral surface. The plasma-resistant adhesive layer is formed between the electrostatic chuck part outer peripheral surface and the insulator outer end face.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.