Method for processing a holding plate, in particular for a clamp for holding a wafer
US10475689B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jan 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for processing a holding plate (10) of a clamping device (in particular clamp wafer chuck) for holding a component, in particular a wafer, wherein the holding plate (10) has a SiC-based surface (12) on which at least one protruding, SiC-based surface element (13) is formed, includes the steps of locally limited heating of the holding plate (10) in a predetermined surface section and creating the surface element (13) at the predetermined surface section by chemical vapor deposition, in particular by means of laser CVD. Applications of the method exist in repairing a holding plate (10) of a clamping device or manufacturing a holding plate (10) of a clamping device. Furthermore, a holding plate of a clamping device for holding a component, in particular a wafer, is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.