Method for forming semiconductor device structure having conductive structure with twin boundaries
US10475742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Nov 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.