Electrostatic discharge protection apparatuses

US10475783B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Jan Claes · Mortsel, BE
• Stephen John Sque
• Maarten Jacobus Swanenberg · Berg en Dal, NL
• Da-Wei Lai · Nijmegen, NL

Key dates

• Filing date: Oct 13, 2017
• Grant date: Nov 12, 2019
• Expiry date: Oct 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/711

Abstract

Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.