Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same

US10475788B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chun-Han Chen · Taichung, TW
• Chen-Ming Lee · Yangmei District, TW
• Fu-Kai Yang · Hsinchu, TW
• Mei-Yun Wang
• Jr-Hung Li
• Bo-Cyuan Lu · New Taipei, TW

Key dates

• Filing date: Nov 24, 2017
• Grant date: Nov 12, 2019
• Expiry date: Jan 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/797

Abstract

A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a first gate structure formed over the fin structure. The FinFET device structure also includes a first capping layer formed over the first gate structure and a first etching stop layer over the first capping layer and the first gate structure. The FinFET device structure further includes a first source/drain (S/D) contact structure formed over the fin structure and adjacent to the first gate structure. A portion of the first etching stop layer which is directly above the first capping layer is higher than another portion of the first etching stop layer which is directly above the first gate spacer layer.