TFT substrate manufacturing method and TFT substrate
US10475821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2017 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jun 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
The present invention provides a TFT substrate manufacturing method and a TFT substrate. In the TFT substrate manufacturing method of the present invention, a pattern of the gate metal layer has been designed such that reflective blocks are included in a gate metal layer at locations corresponding to areas in which connection holes are to be formed so that in a process of forming the connection holes, light is reflected by the reflective blocks to enhance intensity of exposure on locations where the connection holes are formed. Thus, even under the condition that limit exposure size of an existing exposure machine is constrained, it is still possible to ensure full exposure in forming the connection holes in a high PPI display panel device to thereby realize production of high display panel products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.