Thin film transistor and photoelectric device thereof
US10475826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | May 4, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.