Light emitting device having gallium nitrade substrate
US10475960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2016 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Sep 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
Abstract
Disclosed in an embodiment is a light emitting device comprising: a substrate; a light emitting structure, which includes a first semiconductor layer, an active layer, a second semiconductor layer, and a first groove penetrating through the second semiconductor layer and the active layer and disposed up until a partial region of the first semiconductor layer; a reflective electrode layer covering a lower part of the second semiconductor layer and a sidewalls of the first groove; a first ohmic electrode disposed inside the first groove and electrically connected to the first semiconductor layer; and a first insulation layer for electrically insulating the first ohmic electrode and the reflective electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.