Oxide memory resistor including semiconductor nanoparticles
US10475994B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jul 5, 2012 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Mar 18, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/34
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention relates to memory resistors, arrays of memory resistors and a method of making memory resistors. In particular, this invention relates to memory resistors having an on state and an off state, comprising: (a) a first electrode; (b) a second electrode; (c) a dielectric layer disposed between the first and second electrodes; wherein the dielectric layer comprises nanoparticles of semiconductor material, and wherein in the on state nanoparticles form at least one conductive filament encapsulated by the dielectric layer, thereby providing a conductive pathway between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.