Optical-readout synaptic device based on SiOxNy and preparation method thereof

US10475996B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Wei Li · Shanghai, CN
• Yicheng Chen · Hubei, CN
• Dongyang Li · Kingston, US
• Hao Zhong · Milpitas, US
• Deen Gu · Sichuan, CN
• Yadong Jiang · Sichuan, CN

Key dates

• Filing date: May 25, 2018
• Grant date: Nov 12, 2019
• Expiry date: May 25, 2038

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/12035
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optical-readout synaptic device based on SiOxNy and a preparation method thereof are provided. The device includes a surface plasmonic waveguide and a memristor; the surface plasmonic waveguide has a vertical three-layer structure that a second metal layer, a SiNx dielectric layer and a first metal layer are successively arranged from top to bottom; the memristor has a vertical four-layer structure that a second electrode layer, a second resistive layer, a first resistive layer and a first electrode layer are successively arranged from top to bottom; the memristor is embedded in the surface plasmonic waveguide; and, the first resistive layer and the second resistive layer of the memristor serve as an optical signal transmission channel that is horizontally connected with the SiNx dielectric layer of the surface plasmonic waveguide. The present invention realizes an optical-readout of synaptic weight and has incomparable advantages over a conventional electrical-readout synaptic device.