Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices
US10476457B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2016 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Jul 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current field-effect transistors (NiFET and PiFET) and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel/W/L of drain channel).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.