Composite device
US10476471B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | Aug 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/25
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5λ where λ is a wavelength defined by an electrode finger pitch of the IDT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.