Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess
US10479675B2 · kind B2 · utility
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2References
7Claims
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Assignee
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Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0882
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.