Oxynitride thin film and capacitance element
US10479732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Mar 28, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/768
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein “A” is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, “B” is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.