Method of manufacturing dishwasher
US10480081B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/1241
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method of manufacturing a dishwasher including: forming a first layer containing zirconium oxide and silicon oxide on a surface of the inner wall at a heat treatment of 200° C. or higher; forming a second layer containing an oxoacid on a surface of the first layer at a heat treatment temperature lower than the heat treatment temperature of the first layer; and obtaining a thin-film layer containing zirconium oxide and silicon oxide on the surface of the inner wall and having a contact angle of water of 20° or less on the surface, after removing the second layer by using a washing method, in which the first layer contains the zirconium oxide in an amount of 80 mass % or more in terms of oxide and the silicon oxide in an amount of 1-20 mass % in terms of oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.