Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same
US10481005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Oct 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2210/56
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.