Magnetic memory device and method of writing magnetic memory device
US10482939B2 · kind B2 · utility
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9References
16Claims
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Key dates
| Filing date | Nov 27, 2017 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Nov 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.