Dual demarcation voltage sensing before writes
US10482960B2 · kind B2 · utility
0Cited by
6References
14Claims
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Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Feb 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2263
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory (e.g. phase change memory) devices, systems, and methods of programming the nonvolatile memory including sensing of a snapback current using a set demarcation voltage for set bit mapped cells and a reset demarcation voltage for reset bit mapped cells before selective writes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.