Self-aligned double patterning (SADP) method
US10483119B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Oct 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to integrated circuit device manufacturing processes. A self-aligned double patterning method is provided. In the method, a lithography process for line cut that determines the locations of line termini is performed after forming a spacer layer alongside the mandrel and prior to stripping the mandrel. The lithographic mask for the line cut is aligned to the mandrel and the spacer layer using a mark made of the mandrel material and the spacer material. Compared to the previous approach where the line cut process is performed after the mandrel removal, in the disclosed approach, the line termini mask is made of the mandrel material and the spacer material, and is more distinguishable compared to a mark made of just the spacer material. Thereby, the methods provide robust photo alignment signal for the line cut photolithography and precise positioning of the line termini mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.