Method for roughening the surface of a metal layer, thin film transistor, and method for fabricating the same
US10483129B2 · kind B2 · utility
1Cited by
2References
6Claims
0Family size
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Key dates
| Filing date | Sep 27, 2017 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Nov 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure discloses a method for roughening a surface of a metal layer, a thin film transistor, and a method for fabricating the same. The method for roughening the surface of a metal layer includes: forming a first photo-resist layer on the surface of the metal layer, and processing the first photo-resist layer at high temperature; and stripping the first photo-resist layer to roughen the surface of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.