Ultra thin helmet dielectric layer for maskless air gap and replacement ILD processes
US10483160B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Sep 23, 2015 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Sep 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A helmet layer is deposited on a plurality of conductive features on a first dielectric layer on a substrate. A second dielectric layer is deposited on a first portion of the helmet layer. An etch stop layer is deposited on a second portion the helmet layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.