Semiconductor device with heat radiator
US10483186B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Oct 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first inner heat conductor may include a plurality of first graphite layers. A second inner heat conductor may include a plurality of second graphite layers. The plurality of first graphite layers may be stacked in a first direction which is orthogonal to a direction in which a semiconductor element and a first heat radiator are arranged. The plurality of second graphite layers may be stacked in the direction in which the semiconductor element and the first heat radiator are arranged, or may be stacked in a second direction which is orthogonal to the direction in which the semiconductor element and the first heat radiator are arranged and orthogonal to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.