Patent · US Active

Compensation of an arc curvature generated in a wafer

US10483188B2 · kind B2 · utility

1Cited by

1References

18Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Abdenacer Ait-Mani · Grenoble, FR
Bertrand Chambion · Chambéry, FR

Key dates

Filing date	Dec 14, 2016
Grant date	Nov 19, 2019
Priority date	—
Expiry date	Dec 14, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/2007
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This method comprises the steps of: a) forming a set of first trenches on the first surface of the wafer; b) forming a set of second trenches on the second surface of the wafer, at least partially facing the first trenches; c) filling the first trenches with a first material having a CTE α1; d) filling the second trenches with a second material having a CTE α2, and verifying α2>α0 or α2<α0 depending on whether the first material verifies α1>α0 or α1<α0.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.