Method of manufacturing semiconductor devices and corresponding device
US10483220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2016 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Aug 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method manufactures a semiconductor device including metallizations having peripheral portions with one or more underlying layers having marginal regions extending facing the peripheral portions. The method includes: providing a sacrificial layer to cover the marginal regions of the underlying layer, providing the metallizations while the marginal regions of the underlying layer are covered by the sacrificial layer, and removing the sacrificial layer so that the marginal regions of the underlying layer extend facing the peripheral portions in the absence of contact interface therebetween, thereby avoiding thermo-mechanical stresses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.