EEPROM device

US10483269B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Peng Huang · Shanghai, CN
• Jun Li · Shanghai, CN
• Honggang Dai · Shanghai, CN
• Guanguan Gu · Shanghai, CN

Key dates

• Filing date: Aug 14, 2018
• Grant date: Nov 19, 2019
• Expiry date: Aug 14, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor substrate, a first dielectric layer having a first thickness on the semiconductor substrate, a first opening having a first width in the first dielectric layer, a second dielectric layer having a second thickness disposed in a middle region of the first opening, and a third dielectric layer having a first portion and a second portion disposed on opposite sides of second dielectric layer. The first portion and the second portion have a second width smaller than the first width, and the third dielectric layer has a third thickness smaller than the first thickness and the second thickness.