Optically restorable semiconductor device, method for fabricating the same, and flash memory device using the same
US10483300B2 · kind B2 · utility
1Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | May 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/123
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.