Backside-illuminated complementary metal oxide semiconductor sensor and the manufacturing method thereof
US10483312B2 · kind B2 · utility
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Key dates
| Filing date | Jun 8, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Jun 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprises a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side; and a reflector disposed at the second side of the semiconductor substrate, wherein the reflector is configured to reflect incident light that transmits through the semiconductor substrate back into the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.