Thin film transistor with carbon nanotubes
US10483400B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 14, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | May 14, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor including: an insulating substrate; a gate electrode, located on the insulating substrate; a gate insulating layer, located on the gate electrode; a carbon nanotube structure, located on the gate insulating layer; wherein the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, one of the metallic carbon nanotube segments is used as a source electrode, the other one of the metallic carbon nanotube segments is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.