Patent · US Active

Micron-sized light emitting diode designs

US10483430B1 · kind B1 · utility

7Cited by
1References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 1, 2018
Grant dateNov 19, 2019
Priority date
Expiry dateMay 1, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/816

Abstract

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.