Method of fabricating patterned crystal structures
US10486192B2 · kind B2 · utility
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2References
16Claims
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Assignee
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Key dates
| Filing date | Jun 10, 2016 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Jun 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/821
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a patterned crystal structure for includes depositing an amorphous material. The amorphous material is modified such that a first portion of the amorphous thin-film layer has a first height/volume and a second portion of the amorphous thin-film layer has a second height/volume greater than the first portion. The amorphous material is annealed to induce crystallization, wherein crystallization is induced in the second portion first due to the greater height/volume of the second portion relative to the first portion to form patterned crystal structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.