Thin film capacitor and manufacturing method thereof
US10490355B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jan 19, 2017 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Jan 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/33
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor includes a body including a lower electrode formed on a substrate, a plurality of first electrode layers, and a plurality of second electrode layers stacked alternately with the plurality of first electrode layers, with one of the dielectric layers interposed therebetween. The lower electrode and the first electrode layer have the same polarity as each other, and surface roughness of the first and second electrode layers is less than that of the dielectric layers, thereby securing capacitance and characteristics of the dielectric layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.