Light emitting diode device and method of manufacturing the same
US10490537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.