Thin film transistor, method of manufacturing the same, and display apparatus including the thin film transistor
US10490660B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Sep 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT), a method of manufacturing the TFT, and a display apparatus including the TFT, the TFT including a substrate; a semiconductor layer on the substrate, the semiconductor layer including a channel region, a lightly doped drain (LDD) region, a source region, and a drain region; a gate insulating layer covering the semiconductor layer; a gate electrode overlapping with the channel region such that the gate insulating layer is interposed between the gate electrode and the channel region; and an organic side wall layer on a side surface of the gate electrode, wherein the organic side wall layer includes a silsesquioxane resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.