Flexible high performance inorganic matter FET using built-in strain of inorganic matter on insulator wafer
US10490664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2016 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Apr 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/798
Abstract
Provided is a method for manufacturing an inorganic material having a tensile stress, which includes: forming an inorganic stressor from an inorganic wafer made of an inorganic matter; forming an inorganic layer on the inorganic stressor; and etching a bulk inorganic matter at a lower portion of the inorganic stressor to generate an inorganic material having a tensile stress, wherein the inorganic layer has a tensile stress by etching the bulk inorganic matter to relieve a compressive stress applied to the inorganic stressor when the inorganic stressor is being formed. Therefore, FET and various circuits having higher charge mobility may be realized, and also, since characteristics may be maintained even when being applied to a plastic substrate, high performance flexible electronic device may be manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.